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Reports, briefs and technical notes from Cools on semiconductor packaging technology and industry.

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검은 배경에 쿨스 로고와 TECHNICAL NOTE 라벨, 가운데 HYBRID BONDING 문구가 흰색으로 들어간 이미지.Technical noteThermal control

Hybrid bonding that heats only the Cu bond interface, not the whole wafer

Hybrid bonding heats an entire wafer for 0.5 to 4 hours to complete the Cu bond, even though the heat is needed only within a few micrometres of the interface. This technical note sets out an approach that transmits 1500 nm light through the silicon substrate and generates heat for nanoseconds only in an absorbing layer behind the Cu pad, together with the reasoning behind the design.

검은 배경에 쿨스 로고와 TECHNICAL NOTE 라벨, 가운데 Ag-to-Cu 문구가 흰색으로 들어간 이미지.Technical noteBonding materials

Cu sintering that removes Ag from power semiconductor die attach on ceramic substrates

Attempts to replace silver with copper in power semiconductor die attach go back a long way. What has blocked the switch is a copper oxide film a few nanometres thick. This technical note sets out an approach that addresses that barrier with a PDA functional layer combining reduction and oxidation resistance in a single surface layer, together with the supporting evidence.