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Reports, briefs and technical notes from Cools on semiconductor packaging technology and industry.

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검은 배경에 쿨스 로고와 TECHNICAL NOTE 라벨, 흰색 대형 글자로 RBSC PLATFORM이 적힌 테크니컬 노트 썸네일.Technical notePower semiconductors

Ultrathin InP and Ga₂O₃ layers on an RBSC platform for photonic and power semiconductors

InP and Ga₂O₃ share two constraints: low thermal conductivity and costly single-crystal substrates. This Technical Note describes a common manufacturing platform that transfers only the functional layer onto a reaction-bonded silicon carbide (RBSC) support and joins it by interface-selective optical heating. The full report is available in Korean. An English summary is provided on this page.

검은 배경 위에 쿨스 로고와 TECHNICAL NOTE 라벨, 흰색 큰 글씨로 SIC FOCUS RING이 적힌 썸네일.Technical noteEquipment parts

A near-net SiC core, precursor-derived SiC functional layer and HIP for semiconductor chamber parts

This Technical Note describes a manufacturing platform for semiconductor chamber parts such as focus rings and edge rings, in which a reaction-filled SiC core and a precursor-derived SiC functional layer take on separate roles. It covers the design principles, the process flow and the evaluation plan. The full report is available in Korean. An English summary is provided on this page.

검은 배경에 쿨스 로고와 TECHNICAL NOTE 라벨, 가운데 Ag-to-Cu 문구가 흰색으로 들어간 이미지.Technical notePower semiconductors

Cu sintering that removes Ag from power semiconductor die attach on ceramic substrates

Attempts to replace silver with copper in power semiconductor die attach go back a long way. What has blocked the switch is a copper oxide film a few nanometres thick. This technical note sets out an approach that addresses that barrier with a PDA functional layer combining reduction and oxidation resistance in a single surface layer, together with the supporting evidence.