Cools works on foundational technology in glass packaging, semiconductor bonding, thermal control and power semiconductors, to clear the productivity and reliability bottlenecks of AI semiconductor packaging.
BriefThermal controlAdvanced packaging demands a fast reaction at the bond interface while allowing an ever lower thermal budget for the structures around it. The two demands conflict. Instead of heating and cooling the whole assembly, this brief sets out an approach that switches where energy couples in space and time, applied to two processes: HBM bonding and CPO integration.
Technical noteThermal controlHybrid bonding heats an entire wafer for 0.5 to 4 hours to complete the Cu bond, even though the heat is needed only within a few micrometres of the interface. This technical note sets out an approach that transmits 1500 nm light through the silicon substrate and generates heat for nanoseconds only in an absorbing layer behind the Cu pad, together with the reasoning behind the design.
Technical noteBonding materialsAttempts to replace silver with copper in power semiconductor die attach go back a long way. What has blocked the switch is a copper oxide film a few nanometres thick. This technical note sets out an approach that addresses that barrier with a PDA functional layer combining reduction and oxidation resistance in a single surface layer, together with the supporting evidence.
Measured to prove it. Patented to keep it.
View patentsThe technologies and the adoption paths with which Cools clears the bottlenecks of semiconductor packaging.