Technical notePower semiconductorsUltrathin InP and Ga₂O₃ layers on an RBSC platform for photonic and power semiconductors
InP and Ga₂O₃ share two constraints: low thermal conductivity and costly single-crystal substrates. This Technical Note describes a common manufacturing platform that transfers only the functional layer onto a reaction-bonded silicon carbide (RBSC) support and joins it by interface-selective optical heating. The full report is available in Korean. An English summary is provided on this page.



